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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SA900 description collector-emitter breakdown voltage- : v (br)ceo = -18v(min) good linearity of h fe low collector saturation voltage complement to type 2sc1568 applications designed for audio frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -20 v v ceo collector-emitter voltage -18 v v ebo emitter-base voltage -5 v i c collector current-continuous -1 a i cp collector current-pulse -2 a p c collector power dissipation 1.2 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2SA900 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -1ma; i b = 0 -18 v v (br)cbo collector-base breakdown voltage i c = -10 a; i e = 0 -20 v v (br)ebo emitter-base breakdown voltage i e = -10 a; i c = 0 -5 v v ce(sat) collector-emitter saturation voltage i c = -1a; i b = -50ma -0.5 v v be(sat) base-emitter saturation voltage i c = -0.5a; i b = -50ma -1.2 v i cbo collector cutoff current v cb = -10v; i e = 0 -1 a i ceo collector cutoff current v ce = -18v; i b = 0 -10 a h fe-1 dc current gain i c = -0.5a; v ce = -2v 90 470 h fe-2 dc current gain i c = -1.5a ; v ce = -2v 50 f t current-gain?bandwidth product i c = -50ma; v ce = -6v 200 mhz c ob output capacitance i e =0; v cb = -6v, f test = 1mhz 40 pf ? h fe-1 classifications q r s t u 90-155 130-210 180-280 250-360 330-470 |
Price & Availability of 2SA900
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